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BDT83F |
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| Part Number | BDT83F |
| Manufacturer | Inchange Semiconductor |
| Description | ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F ·Complement to Type BDT82F/84F/86F... |
| Features |
hermal Resistance,Junction to Case
isc website：www.iscsemi.com
MAX UNIT 6 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
BDT81F/83F/85F/87F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT81F
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT83F BDT85F
IC= 30mA; IB= 0
VCE(sat)-1 VCE(sat)-2 VBE(on)
BDT87F
Collector-Emitter Voltage
Collector-Emitter Voltage
Saturation Saturation
Base-Emitter On Voltage
IC= 5A; IB= 0.5A IC= 7A; IB= 0.7A IC= 5A ; VCE= 4V
ICES
Collector Cutoff Current
VCE= VCBOmax; VBE=... |
| Document |
 BDT83F Data Sheet
PDF 215.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT83 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | BDT83 |
Comset Semiconductors |
(BDT81 - BDT87) SILICON POWER TRANSISTOR |
|
| 3 | BDT81 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | BDT81 |
Comset Semiconductors |
(BDT81 - BDT87) SILICON POWER TRANSISTOR |
|
| 5 | BDT81F |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|