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BDT87 |
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| Part Number | BDT87 |
| Manufacturer | Inchange Semiconductor |
| Description | ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87 ·Complement to Type BDT82/84/86/88 ·Mi... |
| Features |
rmal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
isc website：www.iscsemi.com
MAX UNIT 1 ℃/W 70 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT81
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT83 BDT85
IC= 30mA; IB= 0
BDT87
VCE(sat)-1 VCE(sat)-2 VBE(on)
ICES
Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current
IC= 5A; IB= 0.5A IC= 7A; IB= 0.7A IC= 5A ; VCE= 4V VCE... |
| Document |
 BDT87 Data Sheet
PDF 214.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT81 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | BDT81 |
Comset Semiconductors |
(BDT81 - BDT87) SILICON POWER TRANSISTOR |
|
| 3 | BDT81F |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | BDT82 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 5 | BDT82 |
Comset Semiconductors |
(BDT82 - BDT88) SILICON POWER TRANSISTOR |
|