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·With TO-126 package ·Complement to type BD231 ·High current (Max:1.5A) ·Low voltage (Max: 80V) APPLICATIONS ·Drive stage in TV circuits PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IBM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base vol.
-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=1A; IB=0.1A IC=1A; IB=0.1A IC=1A ; VCE=2V VCB=30V; IE=0 VEB=5V; IC=0 IC=5mA ; VCE=2V IC=150mA ; VCE=2V IC=1A ; VCE=2V IC=50mA ; VCE=5V 40 40 25 125 MIN TYP. www.datasheet4u.com BD230 SYMBOL VCEsat VBEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT MAX 0.8 1.2 1.3 0.1 0.1 UNIT V V V µA µA 250 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com BD230 Fig.2 Outline dimensions 3 .
BD230 - INCHANGE
·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD227/229/231 ·Minimum Lot-to-Lot variations for robust .
BD230 - NXP
handbook, halfpage BD230 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPT.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BD231 |
NXP |
PNP power transistor |
|
| 2 | BD231 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | BD231 |
Philips Semiconductors |
(BD2xx) Small-signal Transistors |
|
| 4 | BD231 |
INCHANGE |
PNP Transistor |
|
| 5 | BD2310G |
ROHM |
1ch 4A High Speed Low-side Gate Driver |
|
| 6 | BD232 |
INCHANGE |
NPN Transistor |
|
| 7 | BD2327N50100AHF |
Anaren |
Ultra Low Profile 0404 Balun |
|
| 8 | BD233 |
MCC |
NPN Transistor |
|
| 9 | BD233 |
JCET |
NPN Transistor |
|
| 10 | BD233 |
Fairchild Semiconductor |
NPN Transistor |
|
| 11 | BD233 |
Toshiba |
Silicon NPN Transistor |
|
| 12 | BD233 |
CDIL |
EPITAXIAL SILICON POWER TRANSISTORS |
|