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BD231 - NXP

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BD231 PNP power transistor

PNP power transistor in a TO-126; SOT32 plastic package. NPN complement: BD230. handbook, halfpage BD231 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION 2 3 1 1 2 3 Top view MAM272 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating Sys.

Features


• High current (max. 1.5 A)
• Low voltage (max. 80 V). APPLICATIONS
• Driver stages in television circuits. DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complement: BD230. handbook, halfpage BD231 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION 2 3 1 1 2 3 Top view MAM272 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter vol.

The same part from a different manufacturer

Datasheet BD231 - SavantIC BD231

·With TO-126 package ·Complement to type BD230 ·High current (Max:-1.5A) ·Low voltage (Max: -80V) APPLICATIONS ·Drive st.

Datasheet BD231 - Philips Semiconductors BD231

Philips Semiconductors Small-signal Transistors LEADED DEVICES (continued) PNP GENERAL PURPOSE POWER TRANSISTORS TYPE N.

Datasheet BD231 - INCHANGE BD231

·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Complement to Type BD226/228/230 ·Minimum Lot-to-Lot variations for robust.

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