PNP power transistor in a TO-126; SOT32 plastic package. NPN complement: BD230. handbook, halfpage BD231 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION 2 3 1 1 2 3 Top view MAM272 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating Sys.
• High current (max. 1.5 A)
• Low voltage (max. 80 V). APPLICATIONS
• Driver stages in television circuits. DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complement: BD230.
handbook, halfpage
BD231
PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION
2 3 1
1
2
3
Top view
MAM272
Fig.1
Simplified outline (TO-126; SOT32) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter vol.
·With TO-126 package ·Complement to type BD230 ·High current (Max:-1.5A) ·Low voltage (Max: -80V) APPLICATIONS ·Drive st.
Philips Semiconductors Small-signal Transistors LEADED DEVICES (continued) PNP GENERAL PURPOSE POWER TRANSISTORS TYPE N.
·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Complement to Type BD226/228/230 ·Minimum Lot-to-Lot variations for robust.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BD230 |
NXP |
NPN power transistor | |
2 | BD230 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | BD230 |
INCHANGE |
Silicon NPN Power Transistor | |
4 | BD2310G |
ROHM |
1ch 4A High Speed Low-side Gate Driver | |
5 | BD232 |
INCHANGE |
NPN Transistor | |
6 | BD2327N50100AHF |
Anaren |
Ultra Low Profile 0404 Balun | |
7 | BD233 |
MCC |
NPN Transistor | |
8 | BD233 |
JCET |
NPN Transistor | |
9 | BD233 |
Fairchild Semiconductor |
NPN Transistor | |
10 | BD233 |
Toshiba |
Silicon NPN Transistor | |
11 | BD233 |
CDIL |
EPITAXIAL SILICON POWER TRANSISTORS | |
12 | BD233 |
WEITRON |
NPN Transistor |