PBRP123ET |
Part Number | PBRP123ET |
Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
Description | www.DataSheet4U.com 800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN compleme... |
Features |
I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance
1.3 Applications
I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads
1.4 Quick reference data
Table 1. Symbol VCEO IO IORM R1 R2/R1
[1] [2] [3]
Quick reference data Parameter collector-emitter voltage output current repetitive peak output current tp ≤ 1 ms; δ ≤ 0.33 bias resisto... |
Document |
PBRP123ET Data Sheet
PDF 151.73KB |
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