LH5324000 |
Part Number | LH5324000 |
Manufacturer | Sharp Electrionic Components |
Description | The LH5324000 is a 24M-bit CMOS mask-programmable ROM organized as 3,145,728 × 8 bits. It is fabricated using silicon-gate CMOS process technology. 42-PIN DIP CMOS 24M (3M × 8) MROM PIN CONNECTIONS T... |
Features |
• 3,145,728 × 8 bit organization • Access time: 150 ns (MAX.) • Supply current: – Operating: 65 mA (MAX.) – Standby: 100 µA (MAX.) • TTL compatible I/O • Three-state output • Single +5 V Power supply • Static operation • When the address input at both A19 and A20 is high level, outputs become high impedance irrespective of CE or OE. • Package: 42-pin, 600-mil DIP • Others: – Non programmable – Not designed or rated as radiation hardened – CMOS process (P type silicon substrate) DESCRIPTION The LH5324000 is a 24M-bit CMOS mask-programmable ROM organized as 3,145,728 × 8 bits. It is fabricated u... |
Document |
LH5324000 Data Sheet
PDF 52.46KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LH5324500 |
Sharp Electrionic Components |
CMOS 24M (3M x 8/1.5M x 16) MROM | |
2 | LH5324C00 |
Sharp Electrionic Components |
CMOS 24M (1.5M x 16) MROM | |
3 | LH5324P00A |
Sharp Electrionic Components |
CMOS 24M (3M x 8/1.5M x 16) Mask-Programmable ROM | |
4 | LH532000B |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM | |
5 | LH532000B-1 |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM |