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H5N2004DS |
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| Part Number | H5N2004DS |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005 Features www.DataSheet4U.com • Low • Low on-resistance: R DS ... |
| Features |
www.DataSheet4U.com • Low • Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V) • High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A) • Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A) • Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) G 1 2 3 S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 H5N2004DL, H5N2004DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to... |
| Document |
 H5N2004DS Data Sheet
PDF 126.44KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | H5N2004DL |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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| 2 | H5N2001LD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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| 3 | H5N2001LM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 4 | H5N2001LS |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 5 | H5N2003P |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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