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H5N2003P |
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| Part Number | H5N2003P |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | H5N2003P Silicon N Channel MOS FET High Speed Power Switching REJ03G0235-0100Z Rev.1.00 Apr.09.2004 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outl... |
| Features |
• Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)No... |
| Document |
 H5N2003P Data Sheet
PDF 119.38KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | H5N2001LD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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| 2 | H5N2001LM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 3 | H5N2001LS |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 4 | H5N2004DL |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 5 | H5N2004DS |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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