STP4NC60 |
Part Number | STP4NC60 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge ... |
Features |
ter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 4.2 2.6 16.8 100 0.8 3.5 –65 to 150 (*)Limited only by maximum Temperature allowed Value STP(B)4NC60(-1) 600 600 ±30 4.2(*) 2.6(*) 16.8(*) 35 0.28 3.5 2500 STP4NC60FP Unit V V V A A A W W/°C V/ns V °C ( •)Pulse width limited by safe ope... |
Document |
STP4NC60 Data Sheet
PDF 277.35KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STP4NC60A |
ST Microelectronics |
N-CHANNEL MOSFET | |
2 | STP4NC60AFP |
ST Microelectronics |
N-CHANNEL MOSFET | |
3 | STP4NC60FP |
ST Microelectronics |
N-CHANNEL MOSFET | |
4 | STP4NC50 |
ST Microelectronics |
N-CHANNEL MOSFET | |
5 | STP4NC50FP |
ST Microelectronics |
N-CHANNEL MOSFET |