STP8NA50FI |
Part Number | STP8NA50FI |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
Features |
j Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Value STP8NA50FI 500 500 ± 30 8 5.3 32 125 1 -65 to 150 150 4.5 3 32 45 0.36 2000
Unit
V V V A A A W W/o C V
o o
C C
( •) Pulse width limited by safe operating area November 1996 1/10 STP8NA50/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl... |
Document |
STP8NA50FI Data Sheet
PDF 205.77KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STP8NA50 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
2 | STP8N120K5 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STP8N65M5 |
ST Microelectronics |
Power MOSFETs | |
4 | STP8N65M5 |
INCHANGE |
N-Channel MOSFET | |
5 | STP8N80K5 |
STMicroelectronics |
N-channel Power MOSFET |