H5N2008P |
Part Number | H5N2008P |
Manufacturer | Renesas (https://www.renesas.com/) Technology |
Description | H5N2008P Silicon N Channel MOS FET High Speed Power Switching REJ03G0390-0300 Rev.3.00 Nov.24.2004 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outli... |
Features |
• Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID ... |
Document |
H5N2008P Data Sheet
PDF 150.22KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | H5N2001LD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
2 | H5N2001LM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
3 | H5N2001LS |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
4 | H5N2003P |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
5 | H5N2004DL |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |