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AP4501GD |
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| Part Number | AP4501GD |
| Manufacturer | Advanced Power Electronics |
| Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 D1 D2 G2 S2 Abs... |
| Features |
Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit ℃/W
Data and specifications subject to change without notice
200622051-1/7
www.DataSheet4U.com
AP4501GD
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.02 13 9 2 5 6 5 19 5 645 150 95 1.6 Max. Units 28 42 3 1 25 ±100 15 1030 2.5 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
o
Breakdown Voltage Te... |
| Document |
 AP4501GD Data Sheet
PDF 119.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP4501GM |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP4501GM-HF |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP4501GSD |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP4501AGEM-HF |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP4501AGEY-HF |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|