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K9HBG08U1M |
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| Part Number | K9HBG08U1M |
| Manufacturer | Samsung Electronics |
| Description | Offered in 2Gx8bit, the K9LAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operati... |
| Features |
• Voltage Supply : 2.7 V ~ 3.6 V • Organization - Memory Cell Array : (2G + 64M)bit x 8bit - Data Register : (2K + 64)bit x8bit • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max.) - Serial Access : 30ns(Min.) *K9MCG08U5M : 50ns(Min.) • Memory Cell : 2bit / Memory Cell • Fast Write Cycle Time - Program time : 800µs(Typ.) - Block Erase Time : 1.5ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Relia... |
| Document |
 K9HBG08U1M Data Sheet
PDF 1.11MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K9HAG08U1M |
Samsung |
Flash Memory |
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| 2 | K9HCG08U1D |
Samsung semiconductor |
4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory |
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| 3 | K9HCG08U1E |
Samsung |
16Gb E-die NAND Flash |
|
| 4 | K9HCG08U1M |
Samsung Electronics |
FLASH MEMORY |
|
| 5 | K9HCG08U5D |
Samsung |
FLASH MEMORY |
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