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SPA12N50C3 |
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| Part Number | SPA12N50C3 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.38 Ω ID 11.6 A • Periodic av... |
| Features |
ge temperature Reverse diode dv/dt 7)
Symbol
ID
ID puls EAS
EAR
IAR VGS VGS Ptot Tj , Tstg dv/dt
Value
SPP_I
SPA
11.6 7
34.8 340
11.61) 71) 34.8 340
0.6
0.6
11.6
11.6
±20
±20
±30
±30
125
33
-55...+150 15
Unit A
A mJ
A V W °C V/ns
Rev. 3.1
Page 1
2009-11-30
SPP12N50C3 SPI12N50C3, SPA12N50C3
Maximum Ratings Parameter Drain Source voltage slope
VDS = 400 V, ID = 11.6 A, Tj = 125 °C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, lead... |
| Document |
 SPA12N50C3 Data Sheet
PDF 635.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPA12N50C3 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | SPA1118Z |
RF Micro Devices |
POWER AMPLIFIER |
|
| 3 | SPA11N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 4 | SPA11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 5 | SPA11N60C3 |
INCHANGE |
N-Channel MOSFET |
|