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SPP11N60C2 |
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| Part Number | SPP11N60C2 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | www.DataSheet4U.com Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • ... |
| Features |
< VDD , di/dt=100A/µs, Tjmax =150°C
A V/ns V W
dv/dt
VGS VGS Ptot
Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C
125
33
Operating and storage temperature
Page 1
Tj , Tstg
-55...+150
°C
2002-08-12
Final data Thermal Characteristics Parameter Characteristics
SPP11N60C2, SPB11N60C2 SPA11N60C2
Symbol min.
Values typ. max.
Unit
Thermal resistance, junction - case Thremal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6... |
| Document |
 SPP11N60C2 Data Sheet
PDF 187.69KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPP11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 2 | SPP11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | SPP11N60CFD |
Infineon Technologies |
Power Transistor |
|
| 4 | SPP11N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 5 | SPP11N60S5 |
INCHANGE |
N-Channel MOSFET |
|