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GSMBT5551 |
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| Part Number | GSMBT5551 |
| Manufacturer | GTM |
| Description | Features NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT5551 is designed for general purpose applications requiring high breakdown voltage. High Collector-Emitter Breakdown Voltage (BVCEO=160V @ I... |
| Features |
NP N EP ITAXI AL P L ANAR T RANS ISTO R
The GSMBT5551 is designed for general purpose applications requiring high breakdown voltage. High Collector-Emitter Breakdown Voltage (BVCEO=160V @ IC=1mA) Complementary to GSMBT5401
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to... |
| Document |
 GSMBT5551 Data Sheet
PDF 235.71KB |
| Distributor | Stock | Price | Buy |
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