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GSC9406 |
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| Part Number | GSC9406 |
| Manufacturer | GTM |
| Description | Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.37... |
| Features |
Package Dimensions
REF. A B C D E F
Millimeter Min. Max.
5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25
REF. M H L J K G
Millimeter Min. Max.
0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings 30 ±20 9 7.5 50 2.5 0.02 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data... |
| Document |
 GSC9406 Data Sheet
PDF 308.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GSC9410 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | GSC9431 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | GSC9435 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | GSC9435M |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | GSC945 |
GTM |
NPN EPITAXIAL SILICON TRANSISTOR |
|