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SSR1N50A |
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| Part Number | SSR1N50A |
| Manufacturer | Fairchild Semiconductor |
| Description | www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Cur... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 4.046 Ω (Typ.)
SSR/U1N50A
BVDSS = 500 V RDS(on) = 5.5 Ω ID = 1.3 A
D-PAK
2 1 3 1
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repet... |
| Document |
 SSR1N50A Data Sheet
PDF 291.23KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SSR1N50B |
Fairchild Semiconductor |
520V N-Channel MOSFET |
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| 2 | SSR1N60A |
Fairchild Semiconductor |
Advanced Power MOSFET |
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| 3 | SSR1N60B |
Fairchild Semiconductor |
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| 4 | SSR1008 |
SSDI |
(SSR1008 - SSR1010) SCHOTTKY RECTIFIER |
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| 5 | SSR1008-28 |
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