These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited.
•
•
•
•
•
• 1.3A, 520V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 8.3 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
D
!
●
◀
▲
●
●
G
S
D-PAK
SSR Series
I-PAK
G D S
SSU Series
G!
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
SSR1N50B / SSU1N50B 520 1.3 0.82 5.0 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSR1N50A |
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET | |
2 | SSR1N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
3 | SSR1N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
4 | SSR1008 |
SSDI |
(SSR1008 - SSR1010) SCHOTTKY RECTIFIER | |
5 | SSR1008-28 |
SSDI |
(SSR10xx-28) SCHOTTKY RECTIFIER | |
6 | SSR1008G |
SSDI |
(SSR1008G - SSR1010G) SCHOTTKY RECTIFIER | |
7 | SSR1008J |
SSDI |
(SSR1008J - SSR1010J) SCHOTTKY RECTIFIER | |
8 | SSR1008M |
SSDI |
(SSR1008M - SSR1010M) SCHOTTKY RECTIFIER | |
9 | SSR1008Z |
SSDI |
(SSR1008Z - SSR1010Z) SCHOTTKY RECTIFIER | |
10 | SSR1009 |
SSDI |
(SSR1008 - SSR1010) SCHOTTKY RECTIFIER | |
11 | SSR1009-28 |
SSDI |
(SSR10xx-28) SCHOTTKY RECTIFIER | |
12 | SSR1009G |
SSDI |
(SSR1008G - SSR1010G) SCHOTTKY RECTIFIER |