www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ.) SSR/U1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 0.9 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3.
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ.) SSR/U1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 0.9 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetiti.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSR1N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
2 | SSR1N50A |
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET | |
3 | SSR1N50B |
Fairchild Semiconductor |
520V N-Channel MOSFET | |
4 | SSR1008 |
SSDI |
(SSR1008 - SSR1010) SCHOTTKY RECTIFIER | |
5 | SSR1008-28 |
SSDI |
(SSR10xx-28) SCHOTTKY RECTIFIER | |
6 | SSR1008G |
SSDI |
(SSR1008G - SSR1010G) SCHOTTKY RECTIFIER | |
7 | SSR1008J |
SSDI |
(SSR1008J - SSR1010J) SCHOTTKY RECTIFIER | |
8 | SSR1008M |
SSDI |
(SSR1008M - SSR1010M) SCHOTTKY RECTIFIER | |
9 | SSR1008Z |
SSDI |
(SSR1008Z - SSR1010Z) SCHOTTKY RECTIFIER | |
10 | SSR1009 |
SSDI |
(SSR1008 - SSR1010) SCHOTTKY RECTIFIER | |
11 | SSR1009-28 |
SSDI |
(SSR10xx-28) SCHOTTKY RECTIFIER | |
12 | SSR1009G |
SSDI |
(SSR1008G - SSR1010G) SCHOTTKY RECTIFIER |