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LP6872P100 |
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| Part Number | LP6872P100 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam di... |
| Features |
LP6872P100
Packaged 0.5W Power PHEMT GATE
• • • • • +27 dBm Typical Power at 15 GHz 11 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 50% Power-Added-Efficiency Color-coded by IDSS range SOURCE DRAIN DESCRIPTION AND APPLICATIONS The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 720 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structur... |
| Document |
 LP6872P100 Data Sheet
PDF 23.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LP6872 |
Filtronic Compound Semiconductors |
0.5W POWER PHEMT |
|
| 2 | LP6836 |
Filtronic Compound Semiconductors |
MEDIUM POWER PHEMT |
|
| 3 | LP6836P100 |
Filtronic Compound Semiconductors |
Packaged 0.25W Power PHEMT |
|
| 4 | LP6836P70 |
Filtronic Compound Semiconductors |
PACKAGED MEDIUM POWER PHEMT |
|
| 5 | LP6836SOT343 |
Filtronic Compound Semiconductors |
PACKAGED MEDIUM POWER PHEMT |
|