MRF151A |
Part Number | MRF151A |
Manufacturer | Tyco Electronics |
Description | www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) Ze... |
Features |
= 150 W (PEP), f = 30; 30.001 MHz, ID (Max) = 3.75 A) Intermodulation Distortion (1) (VDD = 50 V, Pout = 150 W (PEP), f = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) Load Mismatch (VDD = 50 V, Pout = 150 W (PEP), f1 = 30; 30.001 MHz, IDQ = 250 mA, VSWR 30:1 at all Phase Angles) Gps η 18 — 40 22 13 45 — — — dB %
dB IMD(d3) IMD(d11) ψ No Degradation in Output Power — — – 32 – 60 – 30 — CLASS A PERFORMANCE Intermodulation Distortion (1) and Power Gain (VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 3.0 A) GPS IMD(d3) IMD(d9 – 13) — — — 23 – 50 – 75 — — — dB NOTE: 1. To MIL –STD –... |
Document |
MRF151A Data Sheet
PDF 341.55KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF151 |
Tyco Electronics |
N-CHANNEL BROADBAND RF POWER MOSFET | |
2 | MRF151 |
Motorola |
N-CHANNEL BROADBAND RF POWER MOSFET | |
3 | MRF1511NT1 |
Motorola |
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET | |
4 | MRF1511T1 |
Motorola |
RF Power Field Effect Transistor | |
5 | MRF1513NT1 |
Freescale Semiconductor |
RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET |