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RD00HHS1 |
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| Part Number | RD00HHS1 |
| Manufacturer | Mitsubishi Electric |
| Description | Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING 1.5+/-0.1 RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. TYPE NAME FEATURES High power gai... |
| Features |
High power gain Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
0.8 MIN 2.5+/-0.1
1
2
1.5+/-0.1
0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX
RoHS COMPLIANT
RD00HHS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. www.DataSheet4U.com 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing m... |
| Document |
 RD00HHS1 Data Sheet
PDF 159.07KB |
| Distributor | Stock | Price | Buy |
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|---|---|---|---|---|
| 1 | RD00HVS1 |
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