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MSC82010 |
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| Part Number | MSC82010 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The MSC82010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable o... |
| Features |
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 5.0 °C/W
*Applies only to rated RF amplifier operation
October 1992
1/5
MSC82010
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER I CBO hFE DYNAMIC
Symbol
IC = 5mA IE = 1mA IC = 15mA VCB = 28V VCE = 5V
IE = 0mA IC = 0mA RBE = 10Ω IC = 1000mA
45 3.5 45 — 15
— — — — —
— — — 5.0 120
V V V mA —
Test Conditions
Value Min. Typ. Max.
Unit
POUT ηc GP COB
f = 2.0 GHz f = 2.0 GHz f = 2.0 GHz f = 1 MHz
PIN = 3.0 W PIN = 3.0 W PIN = 3.0 W VCB = 28 V
VCC = 28 V VCC... |
| Document |
 MSC82010 Data Sheet
PDF 113.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MSC82001 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
|
| 2 | MSC82003 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
|
| 3 | MSC82005 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
|
| 4 | MSC82040 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
|
| 5 | MSC8205G |
MORESEMI |
Dual N-Channel Enhancement Mode Power MOS FET |
|