MSC82001 |
Part Number | MSC82001 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The MSC82001 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable o... |
Features |
00 35 200 − 65 to +200
W mA V °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 20 °C/W
*Applies only to rated RF amplifier operation
October 1992
1/5
MSC82001
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER I CBO hFE DYNAMIC
Symbol
IC = 1mA IE = 1mA IC = 5mA VCB = 28V VCE = 5V
IE = 0mA IC = 0mA RBE = 10Ω IC = 100mA
45 3.5 45 — 15
— — — — —
— — — 0.5 120
V V V mA —
Test Conditions
Value Min. Typ. Max.
Unit
POUT ηc GP COB
f = 2.0 GHz f = 2.0 GHz f = 2.0 GHz f = 1 MHz
PIN = 0.2 W PIN = 0.2 W PIN =... |
Document |
MSC82001 Data Sheet
PDF 119.42KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MSC82003 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS | |
2 | MSC82005 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS | |
3 | MSC82010 |
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RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS | |
4 | MSC82040 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS | |
5 | MSC8205G |
MORESEMI |
Dual N-Channel Enhancement Mode Power MOS FET |