IRGB10B60KD International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Datasheet, en stock, prix

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IRGB10B60KD

International Rectifier
IRGB10B60KD
IRGB10B60KD IRGB10B60KD
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Part Number IRGB10B60KD
Manufacturer International Rectifier
Description PD - 94382D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = 600V IC = 12A, TC=100°C Features • Low VCE (on) Non Punch Through IGBT...
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB10B60KD D2Pak IRGS10B60KD Max. 600 22 12 44 44 22 10 44 ± 20 156 62 -55 to +150 TO-262 IRGSL10B60KD Units V Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC ...

Document Datasheet IRGB10B60KD Data Sheet
PDF 327.20KB
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