IRGB15B60KDPbF - International Rectifier

IRGB15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR

PD - 95194A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free C IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KD.

Features

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free C IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF VCES = 600V IC = 15A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.8V Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation. TO-220AB D2Pak IRGS15B60KDPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ .