The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits. Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits. www.
Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy Lead-Free Description The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits. Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits. www.DataSheet4U.com IGBT with on-chip Gate-Emitter and Gate-Collect.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRGB14C40L |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRGB10B60KD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRGB10B60KDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRGB15B60KD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | IRGB15B60KDPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRGB20B60PD1 |
International Rectifier |
SMPS IGBT | |
7 | IRGB20B60PD1PBF |
International Rectifier |
SMPS IGBT | |
8 | IRGB30B60K |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRGB30B60KPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
10 | IRGB4045DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRGB4055PBF |
International Rectifier |
PDP TRENCH IGBT | |
12 | IRGB4056DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |