Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
AND APPLICATIONS DIE SIZE: 28.3X16.5 mils (720x420 µm) DIE THICKNESS: 2.6 mils (65 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 3000 µ m Schottky barrier gate. The rece.
♦ 33.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7 dB Power Gain at 18 GHz ♦ 30.5 dBm Output Power at 1-dB Compression at 3.3V ♦ 45% Power-Added Efficiency
DRAIN BOND PAD (4X) SOURCE BOND PAD (2x) GATE BOND PAD (4X)
LP3000
•
DESCRIPTION AND APPLICATIONS
DIE SIZE: 28.3X16.5 mils (720x420 µm) DIE THICKNESS: 2.6 mils (65 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm)
The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 3000 µ m Schottky barrier gate. T.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LP3000P100 |
Filtronic Compound Semiconductors |
PACKAGED 2W POWER PHEMT |
|
| 2 | LP3000SOT89 |
Filtronic Compound Semiconductors |
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT |
|
| 3 | LP30-1600 |
Superworld Electronics |
POWER TRANSFORMER |
|
| 4 | LP30-1600F |
Superworld Electronics |
POWER TRANSFORMER |
|
| 5 | LP30-200 |
Superworld Electronics |
POWER TRANSFORMER |
|
| 6 | LP30-200F |
Superworld Electronics |
POWER TRANSFORMER |
|
| 7 | LP30-400 |
Superworld Electronics |
POWER TRANSFORMER |
|
| 8 | LP30-400F |
Superworld Electronics |
POWER TRANSFORMER |
|
| 9 | LP30-800 |
Superworld Electronics |
POWER TRANSFORMER |
|
| 10 | LP30-800F |
Superworld Electronics |
POWER TRANSFORMER |
|
| 11 | LP30MHz-1551 |
Soshin |
for studio digital equipment |
|
| 12 | LP3101 |
ETC |
High efficiency high precision low EMI primary feedback LED constant current driver |
|