AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 3000 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.
♦ 29 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 15 dB Power Gain at 1.8 GHz ♦ 1.3 dB Noise Figure ♦ 46 dBm Output IP3 at 1.8 GHz ♦ 55% Power-Added Efficiency
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DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 3000 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimize.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LP3000 |
Filtronic Compound Semiconductors |
2W Power PHEMT | |
2 | LP3000P100 |
Filtronic Compound Semiconductors |
PACKAGED 2W POWER PHEMT | |
3 | LP30-1600 |
Superworld Electronics |
POWER TRANSFORMER | |
4 | LP30-1600F |
Superworld Electronics |
POWER TRANSFORMER | |
5 | LP30-200 |
Superworld Electronics |
POWER TRANSFORMER | |
6 | LP30-200F |
Superworld Electronics |
POWER TRANSFORMER | |
7 | LP30-400 |
Superworld Electronics |
POWER TRANSFORMER | |
8 | LP30-400F |
Superworld Electronics |
POWER TRANSFORMER | |
9 | LP30-800 |
Superworld Electronics |
POWER TRANSFORMER | |
10 | LP30-800F |
Superworld Electronics |
POWER TRANSFORMER | |
11 | LP30MHz-1551 |
Soshin |
for studio digital equipment | |
12 | LP3101 |
ETC |
High efficiency high precision low EMI primary feedback LED constant current driver |