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IRF3808PBF |
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| Part Number | IRF3808PBF |
| Manufacturer | International Rectifier |
| Description | www.DataSheet4U.com Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Designed specifically for Automotive applications, this Advanced Planar S... |
| Features |
of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications.
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operat... |
| Document |
 IRF3808PBF Data Sheet
PDF 239.23KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF3808 |
International Rectifier |
Power MOSFET |
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| 2 | IRF3808 |
INCHANGE |
N-Channel MOSFET |
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| 3 | IRF3808L |
International Rectifier |
Power MOSFET |
|
| 4 | IRF3808L |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRF3808LPBF |
International Rectifier |
(IRF3808SPBF / IRF3808LPBF) AUTOMOTIVE MOSFET |
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