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CEP20P06 |
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| Part Number | CEP20P06 |
| Manufacturer | CET |
| Description | CEP20P06/CEB20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -15A, RDS(ON) =105mΩ @VGS = -10V. RDS(ON) =150mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON... |
| Features |
-60V, -15A, RDS(ON) =105mΩ @VGS = -10V. RDS(ON) =150mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -60
Units V V A A W W/ C C
±20
-15 -45 56 0.37 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above... |
| Document |
 CEP20P06 Data Sheet
PDF 105.85KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CEP20P10 |
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P-Channel Enhancement Mode Field Effect Transistor |
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| 2 | CEP20A03 |
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N-Channel Enhancement Mode Field Effect Transistor |
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| 3 | CEP20N06 |
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N-Channel MOSFET |
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| 4 | CEP2103A |
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| 5 | CEP21A2 |
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