CEP21A2/CEB21A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 25A,RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S.
20V, 25A,RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20 Units V V A A W W/ C C ±12 25 75 43 0.29 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C O.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP21A3 |
CET |
N-Channel MOSFET | |
2 | CEP2103A |
ChipExtra |
Wide-Input Sensorless CC/CV Step-Down DC/DC Converter | |
3 | CEP20A03 |
CET |
N-Channel Enhancement Mode Field Effect Transistor | |
4 | CEP20N06 |
CET |
N-Channel MOSFET | |
5 | CEP20P06 |
CET |
P-Channel MOSFET | |
6 | CEP20P10 |
CET |
P-Channel Enhancement Mode Field Effect Transistor | |
7 | CEP01N6 |
CET |
N-Channel MOSFET | |
8 | CEP01N65 |
CET |
N-Channel MOSFET | |
9 | CEP01N6G |
CET |
N-Channel MOSFET | |
10 | CEP02N6 |
Chino-Excel Technology |
N-channel Enhancement Mode Field Effect Transistor | |
11 | CEP02N65A |
CET |
N-Channel Enhancement Mode Field Effect Transistor | |
12 | CEP02N65D |
CET |
N-Channel MOSFET |