CEP20A03/CEB20A03 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 197A, RDS(ON) = 2 mΩ @VGS = 10V. RDS(ON) = 3 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D.
30V, 197A, RDS(ON) = 2 mΩ @VGS = 10V. RDS(ON) = 3 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 197 124 788 139 1.1 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP20N06 |
CET |
N-Channel MOSFET | |
2 | CEP20P06 |
CET |
P-Channel MOSFET | |
3 | CEP20P10 |
CET |
P-Channel Enhancement Mode Field Effect Transistor | |
4 | CEP2103A |
ChipExtra |
Wide-Input Sensorless CC/CV Step-Down DC/DC Converter | |
5 | CEP21A2 |
CET |
N-Channel MOSFET | |
6 | CEP21A3 |
CET |
N-Channel MOSFET | |
7 | CEP01N6 |
CET |
N-Channel MOSFET | |
8 | CEP01N65 |
CET |
N-Channel MOSFET | |
9 | CEP01N6G |
CET |
N-Channel MOSFET | |
10 | CEP02N6 |
Chino-Excel Technology |
N-channel Enhancement Mode Field Effect Transistor | |
11 | CEP02N65A |
CET |
N-Channel Enhancement Mode Field Effect Transistor | |
12 | CEP02N65D |
CET |
N-Channel MOSFET |