Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
RD01MUS2 |
Click to view a larger image
| Part Number | RD01MUS2 |
| Manufacturer | Mitsubishi Electric |
| Description | Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 1.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device have an interal mo... |
| Features |
•High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ. •Integrated gate protection diode 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 0.1 MAX RoHS COMPLIANT RD01MUS2-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solde... |
| Document |
 RD01MUS2 Data Sheet
PDF 1.11MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RD01MUS1 |
Mitsubishi Electric |
Silicon RF Power MOS FET |
|
| 2 | RD01MUS2B |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor |
|
| 3 | RD0106T |
Sanyo Semicon Device |
High-Speed Switching Diode |
|
| 4 | RD00HHS1 |
Mitsubishi Electric |
RoHS Compliance |
|
| 5 | RD00HVS1 |
Mitsubishi Electric |
RoHS Compliance |
|