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RD02MUS1 |
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| Part Number | RD02MUS1 |
| Manufacturer | Mitsubishi Electric |
| Description | RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 6.0+/-0.15 1 4.9+/-0.15 1.0+/-0.05 FEA... |
| Features |
High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz High Efficiency:65%typ.(175MHz) High Efficiency:65%typ.(520MHz)
2
3
(0.25)
INDEX MARK (Gate)
0.2+/-0.05
For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
0.9+/-0.1
APPLICATION
Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm
RoHS COMPLIANT
RD02MUS1-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the foll... |
| Document |
 RD02MUS1 Data Sheet
PDF 275.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RD02MUS1B |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor |
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| 2 | RD02MUS2 |
Mitsubishi Electric |
RoHS Compliance |
|
| 3 | RD02LUS2 |
Mitsubishi |
Silicon RF Power MOS FET |
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| 4 | RD00HHS1 |
Mitsubishi Electric |
RoHS Compliance |
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| 5 | RD00HVS1 |
Mitsubishi Electric |
RoHS Compliance |
|