IXKG25N80C IXYS Corporation CoolMOS Power MOSFET ISO264 Datasheet, en stock, prix

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IXKG25N80C

IXYS Corporation
IXKG25N80C
IXKG25N80C IXKG25N80C
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Part Number IXKG25N80C
Manufacturer IXYS Corporation
Description www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS(on), High Voltage MOSFET VDSS = 8...
Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due to reduced chip thickness z Low drain to tab capacitance(<40pF) z 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting torque 300 2500 0.9 / 6 8 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 126 297 2 TJ = 2...

Document Datasheet IXKG25N80C Data Sheet
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