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TA4016AFE |
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| Part Number | TA4016AFE |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4016AFE TA4016AFE UHF Wide Band Amplifier Applications Features · Low current: ICC = 6 mA · Wide band: f = 3.2 GHz (3dB down) · Operat... |
| Features |
· Low current: ICC = 6 mA · Wide band: f = 3.2 GHz (3dB down) · Operating supply voltage: VCC = 1.8~3.2 V Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Supply voltage Total power dissipation Operating temperature Storage temperature VCC PD (Note 1) Topr Tstg 3.6 300 -40~85 -55~150 Note 1: When mounted on the glass epoxy of 2.5 cm2 ´ 1.6 t Pin Assignment Weight: 0.003 g (typ.) Unit V mW °C °C Caution This device electrostatic sensitivity. Please handle with caution. 1 2003-03-27 TA4016AFE Electrical Characteristics (Ta = 25°C, Zg = Zl = 50 W) Characteristics Circuit c... |
| Document |
 TA4016AFE Data Sheet
PDF 122.45KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TA4011AFE |
Toshiba Semiconductor |
UHF Wide-Band Amplifier |
|
| 2 | TA4011F |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS |
|
| 3 | TA4011FU |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS |
|
| 4 | TA4012AFE |
Toshiba Semiconductor |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic |
|
| 5 | TA4012F |
Toshiba Semiconductor |
UHF WIDE BAND AMPLIFIER APPLICATIONS |
|