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FDD8782 |
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| Part Number | FDD8782 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for... |
| Features |
Max rDS(on) = 11.0mΩ at VGS = 10V, ID = 35A Max rDS(on) = 14.0mΩ at VGS = 4.5V, ID = 35A Low gate charge: Qg(10) = 18nC(Typ), VGS = 10V Low gate resistance Avalanche rated and 100% tested RoHS Compliant
D
G
D
G DS
I-PAK
S
G
(TO-251AA)
Short Lead I-PAK
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS
Drain to Source Voltage
VGS
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
ID
-Continuous (Die Limited)
-Pulsed
EAS PD TJ, TSTG
Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature
Therma... |
| Document |
 FDD8782 Data Sheet
PDF 453.34KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDD8780 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDD8750 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDD8770 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDD8778 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDD8796 |
Fairchild Semiconductor |
N-Channel MOSFET |
|