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MRF6V2300N |
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| Part Number | MRF6V2300N |
| Manufacturer | Motorola Semiconductor |
| Description | www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs ... |
| Features |
• Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniques • 225°C Capable Plastic Package • RoHS Compliant MRF6V2300N MRF6V2300NB PREPRODUCTION 10 - 450 MHz, 300 W, 50 V LATERAL N - CHANNEL SINGLE - ENDED BROADBAND RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6V2300N CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6V2300NB PARTS ARE SINGLE - ENDED Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage... |
| Document |
 MRF6V2300N Data Sheet
PDF 350.20KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF6V2300NB |
Motorola Semiconductor |
RF Power Field Effect Transistor |
|
| 2 | MRF6V2300NBR1 |
NXP |
RF Power FET |
|
| 3 | MRF6V2300NR1 |
NXP |
RF Power FET |
|
| 4 | MRF6V2010GN |
NXP |
RF Power FET |
|
| 5 | MRF6V2010N |
NXP |
RF Power FET |
|