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IRHN2C50SE |
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| Part Number | IRHN2C50SE |
| Manufacturer | International Rectifier |
| Description | Provisional Data Sheet No. PD-9.1476A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN2C50SE IRHN7C50SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 600 Volt, 0.60Ω, (SEE) RAD HARD HEX... |
| Features |
s Radiation Hardened up to 1 x 105 Rads (Si) s Single Event Burnout (SEB) Hardened s Single Event Gate Rupture (SEGR) Hardened s Gamma Dot (Flash X-Ray) Hardened s Neutron Tolerant s Identical Pre- and Post-Electrical Test Conditions s Repetitive Avalanche Rating s Dynamic dv/dt Rating s Simple Drive Requirements s Ease of Paralleling s Hermetically Sealed s Surface Mount s Light-Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C
IDM PD @ TC = 25°C
Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Lin... |
| Document |
 IRHN2C50SE Data Sheet
PDF 32.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRHN3150 |
International Rectifier |
Radiation Hardened Power MOSFET |
|
| 2 | IRHN4150 |
International Rectifier |
RADIATION HARDENED POWER MOSFET |
|
| 3 | IRHN7130 |
International Rectifier |
Radiation Hardened Power MOSFET |
|
| 4 | IRHN7150 |
International Rectifier |
Radiation Hardened Power MOSFET |
|
| 5 | IRHN7230 |
International Rectifier |
N-Channel Transistor |
|