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IXFH80N10 |
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| Part Number | IXFH80N10 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VDSS = 100 V = 80 A ID25 RDS(on) = 12.5 mΩ trr ≤ 200... |
| Features |
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International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 4.0 ± 100 TJ = 25°C TJ = 125°C 50 1 12.5 V V nA µA mA mΩ
Advantages
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VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2000 IXYS... |
| Document |
 IXFH80N10 Data Sheet
PDF 219.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXFH80N10Q |
IXYS Corporation |
HiPerFET Power MOSFETs |
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| 2 | IXFH80N15Q |
IXYS Corporation |
HiPerFET Power MOSFETs |
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| 3 | IXFH80N08 |
IXYS |
Power MOSFET |
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| 4 | IXFH80N085 |
IXYS Corporation |
HiPerFETTM Power MOSFETs |
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| 5 | IXFH80N20Q |
IXYS |
Power MOSFETs Q-Class |
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