HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N085 IXFT 80N085 VDSS = 85 V = 80 A ID25 RDS(on) = 9 mW trr £ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient T.
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 85 2.0 4.0 ±100 TJ = 25°C TJ = 125°C 50 1 9 V V nA mA mA mW Advantages
• Easy to mount
• Space savings
• High power density
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load switching (UIS)
• Molding epoxies meet UL 94 V-0 flammability classification
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFH80N08 |
IXYS |
Power MOSFET | |
2 | IXFH80N10 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
3 | IXFH80N10Q |
IXYS Corporation |
HiPerFET Power MOSFETs | |
4 | IXFH80N15Q |
IXYS Corporation |
HiPerFET Power MOSFETs | |
5 | IXFH80N20Q |
IXYS |
Power MOSFETs Q-Class | |
6 | IXFH80N60X2A |
INCHANGE |
N-Channel MOSFET | |
7 | IXFH80N60X2A |
IXYS |
Power MOSFET | |
8 | IXFH80N65X2 |
IXYS |
Power MOSFET | |
9 | IXFH80N65X2 |
INCHANGE |
N-Channel MOSFET | |
10 | IXFH86N30T |
IXYS Corporation |
Power MOSFET | |
11 | IXFH86N30T |
INCHANGE |
N-Channel MOSFET | |
12 | IXFH88N30P |
IXYS |
PolarHT HiPerFET Power MOSFET |