HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N08 IXFT 80N08 VDSS ID25 RDS(on) = 80 V = 80 A = 9 mΩ trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM I D25 I L(RMS) I DM IAR EAR EAS dv/dt P D T J TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C.
l International standard packages l Low RDS (on) l Rated for unclamped Inductive load
switching (UIS) l Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l Easy to mount l Space savings l High power density
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98810A (5/01)
Symbol
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
Test Conditions
Characteristic Values
(T J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VDS = 10 V; ID = 0.5
• ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz
35 55
4800.
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