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HY5DU281622LT |
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| Part Number | HY5DU281622LT |
| Manufacturer | Hynix Semiconductor |
| Description | and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.0/Apr. 2003 1 DataSheet4U.com ww... |
| Features |
• • • • • • • VDD, VDDQ = 2.6V +/- 0.1V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) • • • • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock Programmable /CAS latency 2 / 2.5/ 3 supported Programmable burst length 2 / 4 / 8 with both sequential and interleave mode Internal four bank operations with single pulsed /RAS et4U.com • • x16 device has two byte... |
| Document |
 HY5DU281622LT Data Sheet
PDF 560.43KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HY5DU281622LT |
Hynix Semiconductor |
(HY5DU28xxxAT) 3rd 128M DDR SDRAM |
|
| 2 | HY5DU281622LT-H |
Hyundai |
4 Banks x 2M x 16Bit Double Data Rate SDRAM |
|
| 3 | HY5DU281622LT-K |
Hyundai |
4 Banks x 2M x 16Bit Double Data Rate SDRAM |
|
| 4 | HY5DU281622LT-L |
Hyundai |
4 Banks x 2M x 16Bit Double Data Rate SDRAM |
|
| 5 | HY5DU281622 |
Hyundai |
4 Banks x 2M x 16Bit Double Data Rate SDRAM |
|