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2N7369 |
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| Part Number | 2N7369 |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | www.DataSheet4U.com TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/621 Devices 2N7369 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Vdc... |
| Features |
e Cutoff Current VEB = 7.0 Vdc VCEO(sus) ICES ICEX IEBO 80 5.0 5.0 5.0 Vdc mAdc mAdc mAdc
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2N7369 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 2.0 Vdc IC = 3.0 Adc, VCE = 2.0 Vdc Collector-Emitter Saturation Voltage IC = 5.0 Adc, IB = 0.5 Adc Base-Emitter Saturation Voltage IC = 5.0 Adc, IB = 0.5 Adc h... |
| Document |
 2N7369 Data Sheet
PDF 216.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N736 |
Motorola |
NPN silicon annular transistors |
|
| 2 | 2N7368 |
Microsemi Corporation |
NPN HIGH POWER SILICON TRANSISTOR |
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| 3 | 2N731 |
Motorola |
NPN silicon transistor |
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| 4 | 2N7336 |
Sames |
14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS |
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| 5 | 2N735 |
Motorola |
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