TIM1414-5L |
Part Number | TIM1414-5L |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 37.5dBm at 14.0GHz to 14.5GHz ・HIGH GAIN G1dB= 6.0dB at 14.0GHz to 14.5GHz ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1414-... |
Features |
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 37.5dBm at 14.0GHz to 14.5GHz ・HIGH GAIN
G1dB= 6.0dB at 14.0GHz to 14.5GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1414-5L
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C)
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
SYMBOL
CONDITIONS
P1dB
G1dB IDS1
VDS= 9V IDSset= 2.0A f= 14.0 to 14.5GHz
UNIT dBm dB
A
Gain Flatness
G
dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 26.0dBm, f=... |
Document |
TIM1414-5L Data Sheet
PDF 276.06KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TIM1414-5-252 |
Toshiba Semiconductor |
POWER GAAS FET | |
2 | TIM1414-10A |
Toshiba |
Microwave Power GAAS Fet | |
3 | TIM1414-10A-252 |
Toshiba |
Microwave Power GAAS Fet | |
4 | TIM1414-10LA |
Toshiba |
Microwave Power GaAs FET | |
5 | TIM1414-10LA-252 |
Toshiba |
Microwave Power GaAs FET |