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FLL300IL-2 |
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| Part Number | FLL300IL-2 |
| Manufacturer | Fujitsu Microelectronics |
| Description | The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon de... |
| Features |
• • • • • High Output Power: P1dB = 44.5dBm (Typ.) High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and... |
| Document |
 FLL300IL-2 Data Sheet
PDF 154.18KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FLL300IL-1 |
Fujitsu Microelectronics |
L-band Medium & High Power GAAS Fets |
|
| 2 | FLL300IL-3 |
Fujitsu Microelectronics |
(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets |
|
| 3 | FLL300IP-4 |
Fujitsu Microelectronics |
L-band Medium & High Power GAAS Fets |
|
| 4 | FLL351ME |
Fujitsu Media Devices |
L-band medium & high power gaas FTEs |
|
| 5 | FLL357ME |
Fujitsu Microelectronics |
L-band Medium & High Power GAAS Fets |
|