STP210NF02 |
Part Number | STP210NF02 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, ... |
Features |
D2PAK D2PAK TO-220 I2PAK PACKAGING TUBE TAPE & REEL TUBE TUBE
ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) VDGR VGS Gate- source Voltage Drain Current (continuous) at TC = 25°C ID(**) Drain Current (continuous) at TC = 100°C ID IDM( •) Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope dv/dt (1) EAS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Operating Junction Temperature ( •) Pulse width limited by safe operating area. (**) Current Limited by Package V... |
Document |
STP210NF02 Data Sheet
PDF 609.27KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP21N05L |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | |
2 | STP21N05LFI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | |
3 | STP21N06L |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | |
4 | STP21N06LFI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | |
5 | STP21N65M5 |
INCHANGE |
N-Channel MOSFET |