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SI6821DQ |
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| Part Number | SI6821DQ |
| Manufacturer | Vishay (https://www.vishay.com/) Siliconix |
| Description | Si6821DQ New Product Vishay Siliconix P-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.190 @ VGS = –4.5 V 0.280 @ VGS = –3.0 V ID (A) "1.7 "1.3 S... |
| Features |
30 1.2 0.76 1.0 0.64 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t v 10 sec)a Device MOSFET Schottky MOSFET Schottky Symbol Typical Maximum 105 125 Unit RthJA Maximum Junction-to-Ambient (t = steady state)a 115 130 _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70791 S-56954—Rev. C, 01-Mar-99 www.vishay.com S FaxBack 408-970-5600 2-1 Si6821DQ Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltag... |
| Document |
 SI6821DQ Data Sheet
PDF 62.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SI6820DQ |
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N-Channel Reduced Qg / MOSFET with Schottky Diode |
|
| 2 | SI6801DQ |
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Fast Switching MOSFET |
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| 3 | SI6802DQ |
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| 4 | SI6862DQ |
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Dual N-Channel 20-V (D-S) MOSFET |
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| 5 | SI6866BDQ |
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